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Transistor Die

SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications.
All devices are hermetically sealed in metal cans or ceramic packages. This page lists all devices that are currently qualified per MIL-PRF-19500 by the Defense Logistics Agency.

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links to PDF datasheets below


Geometry Polarity Compatible
0003 NPN 2N918, 2N918UB, 2N3960, 2N3960UB
0005 NPN 2N2369A, 2N2369AUB, 2N3227, 2N3227UB, 2N4449
0011 NPN 2N2857, 2N2857UB
0307 NPN 2N930, 2N2919, 2N2920, 2N2484, 2N2484UB
0400 NPN 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A, 2N2219AL, 2N2222A,
2N2222AUB, 2N5581, 2N5582, 2N6989, 2N6990
0410 NPN 2N2060
0806 NPN 2N3735, 2N3735L, 2N3737, 2N3737UB
1008 NPN 2N3866UB, 2N3866A, 2N3866AUB
1009 NPN 2N5109, 2N5109UB
1031 NPN 2N5660, 2N5661, 2N5662, 2N5663
1506 NPN 2N3506, 2N3506L, 2N3506A, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL
3101 NPN 2N4150, 2N4150S
3111 NPN 2N5237, 2N5238
4500 NPN 2N720A, 2N1893, 2N1893S, 2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB
5620 NPN 2N3498, 2N3498L, 2N3499, 2N3499L, 2N3500, 2N3500L, 2N3501, 2N3501L, 2N3501UB
9201 NPN 2N3996, 2N3997, 2N3998, 2N3999, 2N5152, 2N5152L, 2N5154, 2N5154L, 2N5339
9202 NPN 2N5002, 2N5004
9221 NPN 2N5664, 2N5666, 2N5666S
9351 NPN 2N5038, 2N5039
Geometry Polarity Compatible Transistors
0006 PNP 2N4957, 2N4957UB
0014 PNP 2N4261, 2N4261UB
0220 PNP 2N3810, 2N3810L, 2N3811, 2N3811L, 2N2605
0600 PNP 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL, 2N2906A,
2N2906AUB, 2N2907A, 2N2907AUB, 2N3485A, 2N3486A, 2N6987, 2N6988
6700 PNP 2N4029, 2N4033, 2N4033UB
9700 PNP 2N6193
9701 PNP 2N5003, 2N5005
9702 PNP 2N5151, 2N5151L, 2N5153, 2N5153L

Die Details
All of SEMICOA’s transistors are available as transistor die -- designed with the hybrid circuit engineer in mind. Click on any underlined device geometry or transistor type for detailed specifications.

All die are manufactured with an aluminum front side metallization of 15 kÅ minimum. This metallization is protected by ~6 kÅ… of Silox. Backside metallization is ~3 kÅ. of gold. Visual inspection is performed at 40 X to 100 X per MIL-STD 883. SEM qualification of die lots is available per Method 2018 of MIL-STD 883. Standard electrical testing includes 100% DC probe at 25degC. Guard-band testing is used to insure operation at high and low temperatures. Full electrical evaluation is performed to a 10% LTPD to control parameters which cannot be probe tested.

For high reliability application, the following lot qualification tests are available:
Contact Resistance
High Temperature Reverse Bias
Operating Life

Large bond pad die versions are available for ease of use and high yields in hybrid circuit manufacturing. All die can be shipped in compartmented containers (waffle pack) or in wafer form, per customer requirements.