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SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. This page lists all devices that are currently qualified per MIL-PRF-19500 by the Defense Logistics Agency.
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links to PDF datasheets below 
| Geometry |
Polarity |
Compatible |
| 0003 |
NPN |
2N918, 2N918UB, 2N3960, 2N3960UB |
| 0005 |
NPN |
2N2369A, 2N2369AUB, 2N3227, 2N3227UB, 2N4449 |
| 0011 |
NPN |
2N2857, 2N2857UB |
| 0307 |
NPN |
2N930, 2N2919, 2N2920, 2N2484, 2N2484UB |
| 0400 |
NPN |
2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A, 2N2219AL, 2N2222A, 2N2222AUB, 2N5581, 2N5582, 2N6989, 2N6990 |
| 0410 |
NPN |
2N2060 |
| 0806 |
NPN |
2N3735, 2N3735L, 2N3737, 2N3737UB |
| 1008 |
NPN |
2N3866UB, 2N3866A, 2N3866AUB |
| 1009 |
NPN |
2N5109, 2N5109UB |
| 1031 |
NPN |
2N5660, 2N5661, 2N5662, 2N5663 |
| 1506 |
NPN |
2N3506, 2N3506L, 2N3506A, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL |
| 3101 |
NPN |
2N4150, 2N4150S |
| 3111 |
NPN |
2N5237, 2N5238 |
| 4500 |
NPN |
2N720A, 2N1893, 2N1893S, 2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB |
| 5620 |
NPN |
2N3498, 2N3498L, 2N3499, 2N3499L, 2N3500, 2N3500L, 2N3501, 2N3501L, 2N3501UB |
| 9201 |
NPN |
2N3996, 2N3997, 2N3998, 2N3999, 2N5152, 2N5152L, 2N5154, 2N5154L, 2N5339 |
| 9202 |
NPN |
2N5002, 2N5004 |
| 9221 |
NPN |
2N5664, 2N5666, 2N5666S |
| 9351 |
NPN |
2N5038, 2N5039 |
| Geometry |
Polarity |
Compatible Transistors |
| 0006 |
PNP |
2N4957, 2N4957UB |
| 0014 |
PNP |
2N4261, 2N4261UB |
| 0220 |
PNP |
2N3810, 2N3810L, 2N3811, 2N3811L, 2N2605 |
| 0600 |
PNP |
2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, 2N2905AL, 2N2906A, 2N2906AUB, 2N2907A, 2N2907AUB, 2N3485A, 2N3486A, 2N6987, 2N6988 |
| 6700 |
PNP |
2N4029, 2N4033, 2N4033UB |
| 9700 |
PNP |
2N6193 |
| 9701 |
PNP |
2N5003, 2N5005 |
9702 |
PNP |
2N5151, 2N5151L, 2N5153, 2N5153L |
Die Details
All of SEMICOA’s transistors are available as transistor die -- designed with the hybrid circuit engineer in mind. Click on any underlined device geometry or transistor type for detailed specifications.
All die are manufactured with an aluminum front side metallization of 15 kÅ minimum. This metallization is protected by ~6 kÅ… of Silox. Backside metallization is ~3 kÅ. of gold. Visual inspection is performed at 40 X to 100 X per MIL-STD 883. SEM qualification of die lots is available per Method 2018 of MIL-STD 883. Standard electrical testing includes 100% DC probe at 25degC. Guard-band testing is used to insure operation at high and low temperatures. Full electrical evaluation is performed to a 10% LTPD to control parameters which cannot be probe tested.
For high reliability application, the following lot qualification tests are available:
Contact Resistance
High Temperature Reverse Bias
Operating Life
Large bond pad die versions are available for ease of use and high yields in hybrid circuit manufacturing. All die can be shipped in compartmented containers (waffle pack) or in wafer form, per customer requirements.
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